| PART |
Description |
Maker |
| AS7C33512PFS16A |
3.3V 512K x 16/18 pipeline burst synchronous SRAM
3.3V 512K×16 Pipeline Burst Synchronous SRAM(3.3V 512K×16流水线脉冲同步静态RAM) 3.312k × 16管道爆裂同步SRAM的电压（3.3V12k × 16流水线脉冲同步静态内存）
|
Alliance Semiconductor, Corp.
|
| AS7C33512FT32_36A AS7C33512FT32_36A.V1.4 AS7C33512 |
3.3V 512K x 32/36 Flow-through synchronous SRAM 512K X 36 STANDARD SRAM, 10 ns, PQFP100
3.3V 512K x 32/36 Flow-through synchronous SRAM 512K X 32 STANDARD SRAM, 8.5 ns, PQFP100
3.3V 512K x 32/36 Flow-through synchronous SRAM 512K X 36 STANDARD SRAM, 7.5 ns, PQFP100
DIODE ZENER SINGLE 1000mW 39Vz 6.5mA-Izt 0.05 5uA-Ir 29.7Vr DO41-GLASS 5K/AMMO
DIODE ZENER SINGLE 1000mW 27Vz 9.5mA-Izt 0.05 5uA-Ir 20.6Vr DO41-GLASS 5K/AMMO
From old datasheet system
Sync SRAM - 3.3V
|
Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
|
| AS7C25512PFD32_36A AS7C25512PFD32A AS7C25512PFD32A |
2.5V 512K x 32/36 pipelined burst synchronous SRAM 512K X 32 STANDARD SRAM, 3.8 ns, PQFP100
2.5V 512K x 32/36 pipelined burst synchronous SRAM 2.5V的为512k × 32/36管线爆裂同步SRAM
2.5V 512K x 32/36 pipelined burst synchronous SRAM 512K X 32 STANDARD SRAM, 3.5 ns, PQFP100
Sync SRAM - 2.5V
|
Alliance Semiconductor, Corp.
Alliance Semiconductor Corporation
ALSC
Alliance Semiconductor Corp...
|
| IDT71T75602 IDT71T75802S100PFI8 IDT71T75802S100PF8 |
2.5V 1M X 18 ZBT Synchronous 2.5V I/O PipeLine SRAM
*NEW* 2.5V 512K X 36 ZBT Synchronous 2.5V I/O Pipeline SRAM
512K x 36, 1M x 18 2.5V Synchronous ZBT? SRAMs 2.5V I/O, Burst Counter Pipelined Outputs
|
IDT
|
| IS61VF51218A-6.5B3 |
256K x 36, 512K x 18 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM 512K X 18 CACHE SRAM, 6.5 ns, PBGA165
|
Integrated Silicon Solution, Inc.
|
| CYD09S18V-100BBC CYD09S18V-100BBI CYD02S18V-133BBC |
512K X 18 DUAL-PORT SRAM, 4.7 ns, PBGA256 17 X 17 MM, 1 MM PITCH, LEAD FREE, FBGA-256
FLEx18 3.3V 64K/128K/256K/512K x 18 Synchronous Dual-Port RAM
FLEx18垄芒 3.3V 64K/128K/256K/512K x 18 Synchronous Dual-Port RAM
|
Cypress Semiconductor, Corp.
|
| IDT71V65803S133BG IDT71V65803S100BQ IDT71V65803S10 |
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 256K X 36 ZBT SRAM, 3.8 ns, PQFP100
256K x 36/ 512K x 18 3.3V Synchronous ZBT SRAMs
RECTIFIER FAST-RECOVERY SINGLE 1A 100V 30A-ifsm 1V-vf 50ns 5uA-ir DO-41 1K/BULK
|
Integrated Device Technology, Inc.
INTEGRATED DEVICE TECHNOLOGY INC
|
| MCM63P837ZP200R MCM63P919ZP200R MCM63P837ZP200 MCM |
512K X 18 CACHE SRAM, 3 ns, PBGA119
512K X 18 CACHE SRAM, 2.6 ns, PBGA119
256K x 36 and 512K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM
|
FREESCALE SEMICONDUCTOR INC
Motorola, Inc
|
| GS816033T-166I GS816019T-133 GS816019T-150 GS81601 |
166MHz 512K x 32 synchronous SRAM
133MHz 1M x 18 synchronous SRAM
150MHz 1M x 18 synchronous SRAM
166MHz 1M x 18 synchronous SRAM
200MHz 1M x 18 synchronous SRAM
225MHz 1M x 18 synchronous SRAM
250MHz 1M x 18 synchronous SRAM
|
GSI Technology
|
| K4S643232E-TL45 K4S643232E-TL55 K4S643232E-TL70 K4 |
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL 200万32内存512k × 32 × 4银行同步DRAM LVTTL
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL 200万32内存12k × 32 × 4银行同步DRAM LVTTL
512K x 32Bit x 4 Banks Synchronous DRAM Data Sheet
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| HY57V161610D HY57V161610DTC-10 HY57V161610DTC-5 HY |
2 Banks x 512K x 16 Bit Synchronous DRAM 1M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO50
2 Banks x 512K x 16 Bit Synchronous DRAM 1M X 16 SYNCHRONOUS DRAM, 5.5 ns, PDSO50
SDRAM - 16Mb
|
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
|
| IS61LPD102418A-200TQI IS61LPD102418A-200B3 IS61LPD |
512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM 512K X 36 CACHE SRAM, 3.1 ns, PQFP100
512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM 512K X 36 CACHE SRAM, 2.6 ns, PQFP100
|
Integrated Silicon Solution, Inc.
INTEGRATED SILICON SOLUTION INC
|
